- 08:00 - 17:00
- Changzhou：0519-88288870
- Peking：010-80258366
0519-88288870
info@photo-detector.com
| Si PD with NIR sensitivity enchanced (350-1100nm) | ||||||||
| Typ No.
|
Spitzenempfindlichkeit Wellenlänge | Lichtempfindlichkeit | Dark current | Kreuzung Kapazität | Anstiegszeit | Größe der lichtempfindlichen Fläche | Material der Fenster
|
Paket
|
| VR=10mV | VR=0V | VR=0V; RL=1kΩ | ||||||
| [nm] | [A/W] | [pA] | [pF] | [μs] | [mm] | |||
| PDCT01-302 | 920 | 0,43@633nm
0.62@920nm 0,25@1064nm |
5 | 20 | 0.04 | 1.1×1.1 | Borosilikat | TO18/2PIN |
| PDCD34-501 | 50 | 400 | 0.9 | 5.8×5.8 | Harz | DIP | ||
| PDCD100-501 | 150 | 800 | 1.8 | 10×10 | Harz | DIP | ||
| PDCC34-501 | 50 | 400 | 0.9 | 5.8×5.8 | Harz | COB | ||
| PDCC100-501 | 150 | 800 | 1.8 | 10×10 | Harz | COB | ||
