- 08:00 - 17:00
- Changzhou：0519-88288870
- Pekín：010-80258366
0519-88288870
info@photo-detector.com
NIR LED (Near-Infrared LED)
| Parámetro | Símbolo | Condición | Min. | Tipo. | Max. | Unidad |
|---|---|---|---|---|---|---|
| Tensión directa | Vf1 | If=20mA | – | 1.45 | 1.70 | V |
| Corriente inversa | Ir | Vr=-5V | – | – | 2 | μA |
| Longitud de onda de emisión máxima | λp | If=20mA | – | 855 | – | nm |
| Intensidad radiante | Ie | If=20mA | – | 25 | – | mW/sr |
| Ángulo de emisión | 2θ1/2 | If=20mA | – | 20 | – | deg |
| Parámetro | Símbolo | Condición | Values | Unidad |
|---|---|---|---|---|
| Forward current | If | Ta=22°C | ≤ 65 | mA |
| Junction Temperature | Tj | – | ≤ 125 | °C |
| Temperatura de almacenamiento1 | Tstg | – | -40 a +100 | °C |
| Temperatura de funcionamiento1 | Topr | – | -40 a +85 | °C |
| Temperatura de soldadura | Tsol | – | 260 ( < 10s ) | °C |
Nota 1: Sin condensación de rocío.
Key Features & Advantages
Precision Wavelength: En LED NIR de 855 nm provides a stable peak emission wavelength, making it ideal for spectral-sensitive systems.
Focused Output: With a half-intensity angle of 20°, this LED concentrates light energy efficiently, enhancing the signal-to-noise ratio in long-distance detection.
High Luminosity: Engineered for superior brightness, ensuring distinct signal transmission even in challenging environments.
Target Applications
Designed primarily as a light source for conmutadores ópticos, this LED NIR de 855 nm is also suitable for:
Industrial encoders and sensors.
Security surveillance systems requiring invisible illumination.
Automation control systems.
