Fotodiodo PIN de Si con sensibilidad UV mejorada (320-1060nm) PDCC34-601

Experience our High Quantum Efficiency Photodiode for precise UV-NIR detection. This sensor ensures high responsivity for analytical and medical instruments.Its COB design and enhanced UV sensitivity (320-1060nm) make this Si PIN photodiode ideal for compact, high-performance applications.
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Descripción del producto

Si PD with UV sensitivity enchanced (320-1060nm)
Tipo No. Sensibilidad máxima longitud de onda Fotosensibilidad Corriente oscura Capacidad de unión Tiempo de subida Tamaño del área fotosensible Material para ventanas Paquete
VR=10mV VR=0V VR=0V; RL=1kΩ
[nm] [A/W] [pA] [pF] [μs] [mm]
PDCT01-801 800 0,16@365nm

0.47@800nm

2 15 0.05 1.1×1.1 Borosilicato TO18/2PIN
PDCT07-601 5 60 0.13 2.6×2.6 Borosilicato TO5/2PIN
PDCT14-601 8 120 0.26 3.7×3.7 Borosilicato TO5/2PIN
PDCT16-601 10 150 0.33 4.0×4.0 Borosilicato TO5/2PIN
PDCT34-701 15 300 0.66 5.8×5.8 Borosilicato TO8/2PIN
PDCD07-601 0,14@365nm

0.54@800nm

5 60 0.13 2.6×2.6 Resina DIP
PDCD07-801 5 60 0.13 2.6×2.6 Resina DIP
PDCD10-801 8 90 0.2 3.2×3.2 Resina DIP
PDCD34-701 15 300 0.66 5.8×5.8 Resina DIP
PDCD100-301 25 800 1.76 10×10 Resina DIP
PDCC07-601 0,14@365nm

0.54@800nm

5 60 0.13 2.6×2.6 Resina COB
PDCC14-601 10 120 0.26 3.7×3.7 Resina COB
PDCC34-601 15 300 0.66 5.8×5.8 Resina COB
PDCC100-701 25 800 1.76 10×10 Resina COB

PDCC34-601-pic

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