Si PIN Photodiode with UV sensitivity enchanced (320-1060nm) PDCC34-601

Experience our High Quantum Efficiency Photodiode for precise UV-NIR detection. This sensor ensures high responsivity for analytical and medical instruments.Its COB design and enhanced UV sensitivity (320-1060nm) make this Si PIN photodiode ideal for compact, high-performance applications.
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Product Description

Si PD with UV sensitivity enchanced (320-1060nm)
Type No.Peak sensitivity wavelengthPhotosensitivityDark currentJunction capacitanceRise timePhotosensitive area sizeWindow materialPackage
VR=10mVVR=0VVR=0V; RL=1kΩ
[nm][A/W][pA][pF][μs][mm]
PDCT01-8018000.16@365nm

0.47@800nm

2150.051.1×1.1BorosilicateTO18/2PIN
PDCT07-6015600.132.6×2.6BorosilicateTO5/2PIN
PDCT14-60181200.263.7×3.7BorosilicateTO5/2PIN
PDCT16-601101500.334.0×4.0BorosilicateTO5/2PIN
PDCT34-701153000.665.8×5.8BorosilicateTO8/2PIN
PDCD07-6010.14@365nm

0.54@800nm

5600.132.6×2.6ResinDIP
PDCD07-8015600.132.6×2.6ResinDIP
PDCD10-8018900.23.2×3.2ResinDIP
PDCD34-701153000.665.8×5.8ResinDIP
PDCD100-301258001.7610×10ResinDIP
PDCC07-6010.14@365nm

0.54@800nm

5600.132.6×2.6ResinCOB
PDCC14-601101200.263.7×3.7ResinCOB
PDCC34-601153000.665.8×5.8ResinCOB
PDCC100-701258001.7610×10ResinCOB

PDCC34-601-pic

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