Si PIN Photodiode with low dark current (350-1060nm) PDCT01-201

Experience superior signal clarity with our Si PIN photodiode, engineered for ultra-low dark current and high stability. This photodiode ensures precise laser detection and optical measurements. Our low dark current Si PIN photodiode offers exceptional performance.
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Product Description

Si PD with low dark current (350-1060nm)
Type No. Peak sensitivity wavelength Photosensitivity Dark current Junction capacitance Rise time Photosensitive area size Window material Package
VR=10mV VR=0V VR=0V; RL=1kΩ
[nm] [A/W] [pA] [pF] [μs] [mm]
PDCT01-201 720 0.53@720nm 1 20 0.04 1.1×1.1 Borosilicate TO18/2PIN
PDCT01-202 1 20 0.04 1.1×1.1 Ball lens TO18/2PIN
PDCT07-001 2.5 70 0.15 2.6×2.6 Borosilicate TO5/2PIN
PDCT14-001 3.5 160 0.35 3.7×3.7 Borosilicate TO5/2PIN
PDCT34-101 5 350 0.77 5.8×5.8 Borosilicate TO8/2PIN
PDCD07-001 800 0.36@560nm

0.43@633nm

0.52@800nm

2.5 70 0.15 2.6×2.6 Resin DIP
PDCD07-201 2.5 70 0.15 2.6×2.6 Resin DIP
PDCD10-001 3.5 115 0.25 3.2×3.2 Resin DIP
PDCD34-101 5 400 0.9 5.8×5.8 Resin DIP
PDCD100-101 15 800 1.8 10×10 Resin DIP
PDCC07-003 2.5 70 0.15 2.6×2.6 Resin COB
PDCC07-101 2.5 80 0.18 Φ3.0 Resin COB
PDCC14-001 3.5 160 0.35 3.7×3.7 Resin COB
PDCC34-001 5 400 0.9 5.8×5.8 Resin COB
PDCC100-001 15 800 1.8 10×10 Resin COB

PDCT01-201-pic

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